Defects in semiconductors

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Course Description

Introduction to dopants and crystal defects in semiconductors and landmark research papers in this area. Course covers point defects, dislocations, grain boundaries, interfaces etc. and how and why they impact a range of semiconductor devices such as transistors, LEDs, lasers, solar cells, and photodetectors. Emphasis on building phenomenological models of defect structure-property-processing relationships in semiconductors like silicon, GaN, and emerging defect-tolerant semiconductors. Overview of key experimental characterization techniques for defects. Key concepts from semiconductor physics and the materials science of crystal defects will be reviewed. Pre-requisites: MATSCI 209 or EE216 or equivalent

Grading Basis

RLT - Letter (ABCD/NP)

Min

3

Max

3

Course Repeatable for Degree Credit?

No

Course Component

Lecture

Enrollment Optional?

No

Does this course satisfy the University Language Requirement?

No

Programs

MATSCI317 is a completion requirement for: